Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – With particular signal path connections
Reexamination Certificate
2011-07-26
2011-07-26
Smith, Bradley K (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Gate arrays
With particular signal path connections
C257SE29166
Reexamination Certificate
active
07985989
ABSTRACT:
An arrangement of nonvolatile memory devices, having at least one memory device level stacked level by level above a semiconductor substrate, each memory level comprising an oxide layer substantially disposed above a semiconductor substrate, a plurality of word lines substantially disposed above the oxide layer; a plurality of bit lines substantially disposed above the oxide layer; a plurality of via plugs substantially in electrical contact with the word lines and, an anti-fuse dielectric material substantially disposed on side walls beside the bit lines and substantially in contact with the plurality of bit lines side wall anti-fuse dielectrics.
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Haynes Beffel & Wolfeld LLP
Karimy Mohammad T
Macronix International Co. Ltd.
Smith Bradley K
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