Stacked barrier-diffusion source and etch stop for double polysi

Details Stacked barrier-diffusion source and etch stop for double polysi Stacked barrier-diffusion source and etch stop for double polysi

1995-06-07

1996-03-26

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With specified electrode means

257592, H01L 2701, H01L 2712

Patent

active

055023304

ABSTRACT:
A bipolar transistor (100) and a method for forming the same. A base-link diffusion source layer (118) is formed over a portion of the collector region (102). The base-link diffusion source layer (118) comprises a material that is capable of being used as a dopant source and is capable of being etched selectively with respect to silicon. A barrier layer (119) is formed over the base-link diffusion source layer (118). A base electrode (114) is formed over at least one end portion of the barrier layer (119) and base-link diffusion source layer (118) and the exposed portions of the barrier layer (119) and underlying base-link diffusion source layer (118) are removed. An extrinsic base region (110) is diffused from the base electrode (114) and a base link-up region (112) is diffused from the base-link diffusion source layer (118). Processing may then continue to form an intrinsic base region (108), emitter region (126), and emitter electrode (124).

REFERENCES:
patent: 5109262 (1992-04-01), Kadota et al.
patent: 5324983 (1994-06-01), Onai et al.
patent: 5331199 (1994-07-01), Chu et al.
patent: 5350948 (1994-09-01), Maehara
patent: 5374846 (1994-12-01), Takemura
patent: 5403757 (1995-04-01), Suzuki
patent: 5430317 (1995-07-01), Onai et al.

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