Stacked bandgap voltage reference

Details Stacked bandgap voltage reference Stacked bandgap voltage reference

1985-10-15

1987-01-13

Beha, Jr., William M.

Electricity: power supply or regulation systems

Output level responsive

Using a three or more terminal semiconductive device as the...

323281, 323314, G05F 1575

Patent

active

046367101

ABSTRACT:
A pair of ratioed emitter size transistors is operated to produce a .DELTA.V.sub.BE. A second pair of transistors is coupled in series with the first pair and matched therewith so as to produce 2.DELTA.V.sub.BE. This differential voltage appears across a resistor coupled in series with the low current density transistors. This circuit combination produces a current that is proportional to absolute temperature (PTAT) and which is passed through a suitable value resistor to develop a PTAT voltage. This voltage is combined with a negative temperature coefficient voltage produced by forward biased series connected diodes so as to produce a combined voltage that is a multiple of the semiconductor bandgap extrapolated to absolute zero. The diodes are operated at very low current levels so that the circuit requires a very low operating current.

REFERENCES:
patent: Re30586 (1981-04-01), Brokaw
patent: 3893018 (1975-07-01), Marley
patent: 4277739 (1981-07-01), Priel
patent: 4525663 (1985-06-01), Henry

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