Stacked active region laser array for multicolor emissions

Details Stacked active region laser array for multicolor emissions Stacked active region laser array for multicolor emissions

1993-11-02

1995-01-31

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

257 14, 377 45, 377 23, H01S 319

Patent

active

053864280

ABSTRACT:
Monolithic arrays having closely spaced laser stripes which output laser beams with large, but well-controlled, wavelength separations. The monolithic array uses a plurality of stacked active regions which are stacked in the order of decreasing energy bandgaps as one moves away from the substrate. Those active regions are separated by one or more thin etch stop layers. Between the bottom active regions and the substrate is a lower cladding layer, while over the topmost active region of each stack is an upper cladding layer. Beneficially, an electrical connection is made to each stack using a heavily doped capping layer/metallic contact above each stack and a metallic contact on the substrate (which is shared by all stacks). Lateral carrier and optical confinement is achieved using a confinement layer which surrounds each stack. Beneficially, that confinement layer is formed using layer induced disordering.

REFERENCES:
patent: 4982408 (1991-01-01), Shimizu
patent: 5033053 (1991-07-01), Shimizu et al.
patent: 5157680 (1992-10-01), Goto
patent: 5157682 (1992-10-01), Shimada
patent: 5212706 (1993-05-01), Jain
Ikeda, S.; Shimizu, A.; and Hara, T. "Asymmetric Dual Quantum Well Laser--Wavelength Switching Controlled by Injection Current." Appl. Phys. Lett., vol. 55, No. 12, 18 Sep. 1989. pp. 1155-1157.
Ikeda, S.; and Shimizu, A. "Evidence of the Wavelength Switching Caused by a Blocked Carrier Transport in an Asymmetric Dual Quantum Well Laser." Appl. Phys. Lett., vol. 59, No. 5, 29 Jul. 1991. pp. 504-506.

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