Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Reexamination Certificate
2006-01-17
2006-01-17
Pham, Hoai (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
C257S692000, C257S773000, C257S777000, C438S106000
Reexamination Certificate
active
06987314
ABSTRACT:
A stackable semiconductor package includes a substrate with a first side surface that includes circuit patterns. Each circuit pattern includes a pad. A semiconductor die is electrically coupled to the circuit patterns. An encapsulant covers the semiconductor die and the first side surface of the substrate inward of the pads. A layer of a solder is fused to each of the pads. A lateral distance between immediately adjacent pads is selected to be greater than a lateral distance between sidewalls of the encapsulant and immediately adjacent pads, and a height of the solder layers relative to the first side surface is selected to be less than a height of the sidewalls of the encapsulant, so that misalignment of a semiconductor package stacked on the solder layers/pads is self-correcting when juxtaposed ones of the solder layers and respective solder balls of the second semiconductor package are reflowed and fused together.
REFERENCES:
Akito Yoshida and Kazuo Ishibashi, “Design and Stacking of An Extremely Thin Chip-Scale Package,” Electronic Components and Technology Conference, May 27-30, 2003, pp. 1095-1100.
Heo Young Wook
Yoshida Akito
Amkor Technology Inc.
Farahani Dana
Gunnison McKay & Hodgson, L.L.P.
Hodgson Serge J.
Pham Hoai
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