Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Multiple housings
Reexamination Certificate
1999-10-14
2003-01-07
Talbott, David L. (Department: 2827)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Multiple housings
C257S723000, C257S724000, C257S738000, C257S778000, C257S780000, C257S786000, C228S180220, C361S748000, C361S761000, C361S768000, C361S777000, C361S784000, C361S790000, C361S792000
Reexamination Certificate
active
06504241
ABSTRACT:
RELATED APPLICATION DATA
The present application claims priority to Japanese Application No. P10-294155 filed Oct. 15, 1998; Japanese Application No. P10-311057 filed Oct. 30, 1998 and Japanese Application No. P10-371006 filed Dec. 25, 1998 which applications are incorporated herein by reference to the extent permitted by law.
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to the method for manufacturing a semiconductor device and retrofitting of a semiconductor device and more particularly to a semiconductor manufacturing method and a semiconductor device based on the structure of a semiconductor substrate disposed on a printed wiring board (PWB).
2. Description of the Related Art
Digital video cameras, digital portable telephones, and portable electronic equipment such as notebook type personal computers has recently been widely popular and this has increased the need for smaller, thinner, and more lightweight portable equipment.
To realize the size reduction, thinning, and weight reduction of the portable equipment, the increase in part mounting density is an important problem.
In particular, a high density mounting technique has been developed and put to practical use. In the technique, a flip-chip semiconductor device has been used as a semiconductor device such as a semiconductor IC instead of a package semiconductor device.
There is provided a method for mounting such a flip-chip type semiconductor device (flip-chip mounting), that is, for example, such a method that solder ball bumps are formed on the A1 electrode pad, and respective connection terminals of the semiconductor IC chip are made to abut on the solder ball bumps, and the IC chip is then mounted directly on the printed wiring board.
There is provided a method by using electrolytic plating as a method for manufacturing the above mentioned solder balls. According to this method, there is a problem that since the thickness of solder deposited by electrolytic plating is affected by the state of the surface of a primary material layer and slight fluctuation of electric resistance, it is fundamentally difficult to form solder ball bumps with even heights in one IC chip.
As a method for manufacturing solder ball bumps so as to correct the unevenness of the heights of the solder ball bumps, there is provided film deposition by vacuum deposition and pattern forming of photoresist films using lift-off method.
Such methods are carried out for example as shown in FIG.
4
.
First, as shown in
FIG. 9A
, the electrode
1
for a flip-chip type semiconductor IC
1
is formed in the following manner.
The electrode section la comprises an electrode pad
3
comprised of Al—Cu alloy formed on a semiconductor substrate
2
comprised of silicon by sputtering and etching, a silicon oxide film formed on the electrode pad
3
so as to cover the whole surface of the semiconductor substrate
2
, a surface protection film
4
comprised of polyimide, an opening
4
a
formed in the region of the electrode pad
3
of the surface protection film, and a ball limiting metal (BLM) film
5
, that is, a metallic multilayer film comprised of, for example, Cr, Cu, Au, and so on which is formed by sputtering so as to cover the surface of the electrode pad
3
exposed at the side and bottom of the opening
4
.
To form a solder ball bump on the electrode
1
a
of the semiconductor IC chip
1
, as shown in
FIG. 9B
, a resist film
6
having an opening
6
a
in the region of the above BLM film
5
is formed.
Subsequently, as shown in
FIG. 9C
, a solder deposition film
7
is deposited on the resist film
6
so as to cover the whole surface of the semiconductor substrate
2
.
After that, as shown in
FIG. 9D
, by lift-off of the resist film
6
, unnecessary portions of the solder deposition film
7
is removed to form a desired pattern of the solder deposition film.
Lastly, as shown in
FIG. 9E
, by melting the solder of the solder deposition film
7
by thermal treatment, almost spherical solder ball bump
7
a
is formed based on the surface tension of solder.
SUMMARY OF THE INVENTION
In view of the above points, it is an object of the present invention to provide the semiconductor device and the method for manufacturing the same which enable thin and lightweight electronic equipment and realize high reliability and best functions of the electronic equipment.
According to the present invention, thin and lightweight electronic equipment can be manufactured and there can be provided a semiconductor device and the method for manufacturing the same with high reliability and high performance.
According to the first aspect of the present invention, the above object can be attained by the semiconductor device having: a semiconductor chip in which a first protrusion electrode is formed on the semiconductor substrate; and an intermediate substrate which comprises a base substrate, a first external terminal provided in the base substrate, which is joined to the first protrusion electrode, a second external terminal provided in the base substrate, an electrode section being exposed on both surfaces of the base substrate, and a second protrusion electrode formed at one end face of the second external terminal, a plurality of the intermediate substrates being stacked in layers by joining the second protrusion electrode to the other end face of the second external terminal.
According to the configuration of the first aspect, the semiconductor-chip-mounted intermediate substrates are stacked in layers by connecting the second protrusion electrode and the second outer terminal. This reduces the length of wiring between semiconductor chips, enabling high-speed signal processing with inductance reduced. Further, stacking semiconductor chips in layers can realize higher density mounting than two-dimensional mounting, enabling manufacturing small-sized and lightweight semiconductor devices and further manufacturing small-sized and lightweight electronic equipment.
According to the second aspect of the present invention, the above object can be attained by a semiconductor device in the configuration of the fist aspect, wherein thinning is adopted for the surface of the semiconductor chip on which the first protrusion electrode is not formed in the semiconductor substrate to thin the semiconductor substrate.
According to the configuration of the second aspect, a semiconductor chip is processed by grinding, polishing, and etching so that the thickness of the semiconductor chip is reduced. When the semiconductor chips and intermediate substrates are stacked in layers, the length in the direction of the stacking in layers is not therefore increased, and so the semiconductor device can be both miniaturized and lightened.
According to the third aspect of the present invention, the above object can be attained by a semiconductor device in the configuration of the second aspect, wherein the thickness of the semiconductor chip is formed into approx. 200 &mgr;m or less.
According to the configuration of the third aspect, the semiconductor chip is processed to approx. 200 &mgr;m or less. When the semiconductor chips and intermediate substrates are stacked in layers, the length in the direction of the stacking in layers is not therefore increased, and so the semiconductor device can be both miniaturized and lightened.
According to the fourth aspect of the present invention, the above object can be attained by a semiconductor device in the configuration of the first aspect, wherein the thickness of the base substrate of said intermediate substrate is formed into approx. 200 &mgr;m or less.
According to the configuration of the fourth aspect, the intermediate substrate is processed to approx. 200 &mgr;m or less. When the semiconductor chips and intermediate substrates are stacked in layers, the length in the direction of the stacking in layers is not therefore increased, and so the semiconductor device can be both miniaturized and lightened.
According to the fifth aspect of the present invention, the above object can be attained by a semiconducto
Bell Boyd & Lloyd LLC
Chambliss Alonzo
Sony Corporation
Talbott David L.
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