Stack type semiconductor laser device

Details Stack type semiconductor laser device Stack type semiconductor laser device

1996-09-25

1998-09-01

Bovernick, Rodney B.

Coherent light generators

Particular temperature control

Heat sink

372 44, 372 75, 257 88, H01S 304, H01S 319, H01S 3091, H01S 3097

Patent

active

058020888

ABSTRACT:
A stack type semiconductor laser device, which has a large overlapped area of beam patterns made by laser beams irradiated from a plurality of semiconductor laser elements, is disclosed. A first semiconductor laser element is formed on an N-type semiconductor substrate and is bonded to a surface of a pedestal at the side of an N-type electrode thereof through a solder layer. On the other hand, a second semiconductor laser element is differently formed on a P-type semiconductor substrate, and an N-type electrode thereof is bonded to a P-type electrode of the first semiconductor laser element through a solder layer in such a way that the laser beam irradiation planes of both semiconductor laser elements face in the same direction.

REFERENCES:
patent: 4901325 (1990-02-01), Kato et al.
patent: 5086431 (1992-02-01), Hardy, Jr. et al.
patent: 5355382 (1994-10-01), Kovacs et al.
patent: 5477063 (1995-12-01), Shakuda
patent: 5488233 (1996-01-01), Ishikawa et al.
patent: 5604761 (1997-02-01), Seki et al.
patent: 5638391 (1997-06-01), Shima et al.
patent: 5644586 (1997-07-01), Kawano et al.

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