Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Patent
1997-02-12
1998-11-24
Tran, Minh-Loan
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
257 4, 257 5, H01L 4700
Patent
active
058411500
ABSTRACT:
The invention provides a vertically oriented diode for use in delivering large amounts of current to a variable resistance element in a multi-state memory cell. The vertical diode is disposed in a diode container extending downwardly from the top of a tall oxide stack into a deep trench in single crystal silicon. The diode is formed of a combination of single crystal and/or polycrystalline silicon layers disposed vertically inside the diode container. The memory element is formed above the diode to complete a memory cell. The vertical construction of the diode provides a large diode surface area capable of generating a very large current flow through the memory element, as is required for programming. In this way, a highly effective diode can be created for delivering a large current without requiring the substrate surface space normally associated with such large diodes.
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Gonzalez Fernando
Turi Ray
Micro)n Technology, Inc.
Tran Minh-Loan
LandOfFree
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