Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Multiple housings
Reexamination Certificate
2005-07-19
2005-07-19
Pham, Hoai (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Multiple housings
C257S687000, C257S681000
Reexamination Certificate
active
06919628
ABSTRACT:
A stack chip package structure is provided. One principal feature of the structure is the formation of a few peripheral surfaces (e.g. ladder or lead-angle surfaces) at the bottom peripheral sections of a stack structure. When the stack structure is attached to a surface of a die through an adhesive layer, the thickness of the adhesive layer under a peripheral section of the stack structure is greater than a central region. Therefore, as the chip package is subjected to a thermal stress test, the adhesive layer under the peripheral sections of the stack structure is able to provide some buffering against thermal stress so that the stress concentration around the stack structure is reduced. Consequently, damages of the die surface due to stress are prevented and the average working life of the chip package is extended.
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Lee I-Tseng
Liao Hsueh Kuo
Tseng Jen-Te
Ha Nathan W.
Jianq Chyun IP office
Pham Hoai
Via Technologies Inc.
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