Stack capacitor in semiconductor device and method for...

Details Stack capacitor in semiconductor device and method for... Stack capacitor in semiconductor device and method for...

2011-05-17

2011-05-17

Brewster, William M. (Department: 2823)

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

C438S618000

Reexamination Certificate

active

07943476

ABSTRACT:
A stack capacitor in a semiconductor device includes a first capacitor formed on and/or over a semiconductor substrate and a second capacitor formed on and/or over the first capacitor. The first and second capacitors each have a multi-layer laminated structure which includes a lower electrode, a capacitor dielectric layer and an upper electrode. At least two of the lower electrodes and the upper electrodes are arranged vertically with respect to each other to have the same width and/or surface area.

REFERENCES:
patent: 5973908 (1999-10-01), Saia et al.
patent: 6838717 (2005-01-01), Yen et al.
patent: 6949442 (2005-09-01), Barth et al.
patent: 2005/0121744 (2005-06-01), Chang et al.
patent: 2005/0285226 (2005-12-01), Lee
patent: 2007/0111496 (2007-05-01), Won
patent: 1771603 (2006-05-01), None
patent: 10-2006-0078259 (2006-05-01), None
patent: 10-2007-0052484 (2007-05-01), None

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