Stable voltage reference circuit with high Vt devices

Details Stable voltage reference circuit with high Vt devices Stable voltage reference circuit with high Vt devices

1991-12-17

1993-06-22

Ng, Jin F.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

3072961, H03K 301

Patent

active

052218643

ABSTRACT:
A voltage reference circuit that produces an output offset from a supply voltage by approximately two volts, the output being relatively stable in the face of vacillations in the external power supplies. The first leg of the circuit utilizes devices having differing Vt's to produce an internal reference of one volt below Vdd. In a first embodiment of the invention, the second leg has a first device that is diode connected, wherein the gate receives the internal reference and the source is at the high power supply, and a second high Vt diode connected device. The two devices are matched to have the same overdrive current, which is at a voltage that is a function of the difference between the gate-to-source voltage of the first device and the threshold voltage of the first device. Thus, the output is a function of the overdrive to, and the diode drop across, the second high-Vt device.

REFERENCES:
patent: 3823332 (1974-07-01), Feryszka et al.
patent: 4064448 (1977-12-01), Eatock
patent: 4096430 (1978-06-01), Waldron
patent: 4317054 (1982-02-01), Caruso et al.
patent: 4451744 (1984-05-01), Adam
patent: 4454467 (1984-06-01), Sakaguchi
patent: 4553098 (1985-11-01), Yoh et al.
patent: 4645998 (1987-02-01), Shinohara et al.
patent: 4663584 (1987-05-01), Okada et al.
patent: 4670706 (1987-06-01), Tobita
patent: 4812735 (1989-03-01), Sawada et al.
patent: 4814686 (1989-03-01), Watanabe
patent: 4833342 (1989-05-01), Kiryu et al.
patent: 4839535 (1989-06-01), Miller
patent: 5109187 (1992-04-01), Guliani
S. H. Dhong et al., "Silicon Band-Gap Reference Voltage Generators Based on Dual Polysilicon MOS Transistors," IBM Technical Disclosure Bulletin, vol. 32, No. 9B, Feb. 1990, pp. 4-5.
Ser. No. 07/810,000 "Boosted Drive System for Master/Local Word Line Memory Architecture," D. E. Galbi et al., Filed Dec. 18, 1991.

Affiliated with

Also associated with

Rating

Stable voltage reference circuit with high Vt devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Stable voltage reference circuit with high Vt devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Stable voltage reference circuit with high Vt devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1443174