Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1983-06-08
1984-12-25
Saba, William G.
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
252182, 252950, 252951, 423290, 423302, 423344, 427 85, 427240, H01L 21225
Patent
active
044901925
ABSTRACT:
Semiconductor doping compositions comprising a suspension of (a) a dopant material, in the form of finely divided spherical particles of narrow size distribution from about 0.1 D to D, where D is the diameter of the largest particle and is no more than about (1.mu.) comprising a member selected from the group consisting of B.sub.x Si.sub.y, B.sub.x N.sub.y, P.sub.x Si.sub.y, P.sub.x N.sub.y, As.sub.x Si.sub.y and Sb.sub.x Si.sub.y wherein x and y vary from about 0.001 to about 99.999 mole percent, (b) an effective amount of a thermally degradable polymeric organic binder such as polymethyl methacrylate; and (c) an amount of an organic solvent, such a cyclohexanone, sufficient to dissolve said polymeric organic binder, such as polymethylmethacrylate, and to disperse said dopant material are disclosed. Three diffusion processes using the semiconductor doping compositions of the present invention for preparation of semiconductor materials having a wide range of sheet resistances and junction depths are also disclosed. The dopant materials selected for the semiconductor compositions of the present invention are less sensitive to moisture and chemical degradation and thereby afford greater processing latitude, are more reproducible and are less prone to create damage to and/or staining of the semiconductor substrate.
REFERENCES:
patent: 2794846 (1957-06-01), Fuller
patent: 3041214 (1962-06-01), Goetzberger
patent: 3084079 (1963-06-01), Harrington
patent: 3514348 (1970-05-01), Han Ying Ku
patent: 3630793 (1971-12-01), Christensen et al.
patent: 3658584 (1972-04-01), Schmidt
patent: 3660156 (1972-05-01), Schmidt
patent: 3789023 (1974-01-01), Ritchie
patent: 3914138 (1975-10-01), Rai-Choudhury
patent: 3915766 (1975-10-01), Pollack et al.
patent: 3971870 (1976-07-01), Christensen et al.
patent: 4152286 (1979-05-01), Crosson et al.
D. Rupprecht et al. (J. Electrochems. Soc. 1973, vol. 120, pp. 1266-1271) "Oxidized Boron Nitride Wafers as an In-Situ Boron Dopant for Silicon Diffusions".
A. M. Litman et al. (Soc. Plast. Eng., Tech. Pap., 1976 vol. 22 pp. 549-551) "Rheological Properties of Highly Filled Polyolefin/Ceramic Systems Suited for Injection Molding".
Haggerty et al. (Laser-Induced Chemical Processes Plenum Press, New York, 1981 pp. 165-241) "Sinterable Powders from Laser-Driven Reactions".
Donlan Jeffrey P.
Gupta Arunava
West Gary A.
Allied Corporation
Doernberg Alan M.
Fuchs Gerhard H,.
Hampilos Gus T.
Saba William G.
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