Stable rare-earth alloy graded junction contact devices using II

Details Stable rare-earth alloy graded junction contact devices using II Stable rare-earth alloy graded junction contact devices using II

1987-05-07

1989-07-11

James, Andrew J.

357 67, 357 65, 357 63, H01L 2348

Patent

active

048476757

ABSTRACT:
A coating is disclosed for use with GaAs and other Type III-V semiconductor substrates, comprised of a rare-earth element or elements and a non-rare-earth element or elements, that forms an improved graded junction which is thermally stable, has satisfactory electrical properties and is resistant to the through migration of Ga or As.

REFERENCES:
patent: 4017890 (1977-04-01), Howard et al.
patent: 4141020 (1979-02-01), Howard et al.
patent: 4154874 (1979-05-01), Howard et al.
patent: 4201999 (1980-05-01), Howard et al.
patent: 4593307 (1986-06-01), Rupprecht et al.
patent: 4695869 (1987-09-01), Inoue et al.
Ho et al, "Rare Earth Additions to Gold Metallurgy for High-Current Metallurgy Density Operations," IBM Technical Disclosure Bulletin, vol. 20, No. 11A, Apr. 1978, pp. 4631-4632.
Howard, "Fabrication of Ultra-Low Barrier Height SBD Structures Using Rare Earth Transition Metal Alloys," IBM Technical Disclosure Bulletin, vol. 23, No. 8, Jan. 1981, pp. 3681-3682.
Howard et al, "Rare-Earth-Aluminum Intermetallic Compounds for Electromigration Improvement of Micron or Submicron Conductor Lines," IBM Technical Disclosure Bulletin, vol. 20, No. 6, Nov. 1977, pp. 2241-2242.
"Ohmic Contacts to Lightly Doped Silicon Using Rare Earth Metals" by J. K. Howard [IBM Tech. Discl. Bull. 25(4), 1922-1925 (1982)].
"Gate for MOS Devices: Rare Earth Silicides" by J. K. Howard [IBM Tech. Disc. Bull. 21(7), 2811-2812 (1978)].

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