Stable ohmic contacts to thin films of p-type tellurium-containi

Details Stable ohmic contacts to thin films of p-type tellurium-containi Stable ohmic contacts to thin films of p-type tellurium-containi

1987-01-06

1988-04-05

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

136260, 136264, 357 30J, 357 30Q, 357 71, 357 30, 437 5, 437185, 437190, 437192, 437194, H01L 3106, H01L 21443

Patent

active

047356626

ABSTRACT:
A stable ohmic contact for thin films of p-type tellurium-containing II-VI semiconductors and photovoltaic devices incorporating such contacts. An ohmic contact according to the invention includes a contact-forming layer deposited on a p-type thin film of a tellurium-contacting II-VI semiconductor. Preferably, the contact-forming layer is copper having a thickness of about 2 nanometers. An isolation layer is deposited on the contact-forming to isolate subsequently deposited layers from the thin film. The isolation layer may be carbon or a thin layer of nickel. A connection layer for attaching an external electrical conductor is deposited on the isolation layer. The connection layer may be aluminum, chromium or a layer of copper, provided a copper layer is covered with one of silver, aluminum or a thin layer of nickel, preferably covered with aluminum. The stable, ohmic contact may be used as a back contact in a photovoltaic device incorporating a thin film of a tellurium-containing II-VI semiconductor as one of the active semiconductor layers in the device.

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