Stable hydride source compositions for manufacture of semiconduc

Details Stable hydride source compositions for manufacture of semiconduc Stable hydride source compositions for manufacture of semiconduc

1997-11-24

2000-11-14

Langel, Wayne

Chemistry of inorganic compounds

Radioactive

423645, 4236477, 427250, 427252, 427531, 427576, 427585, 556 46, 556 52, 556 58, 556 70, 556 87, 556112, 556121, 556136, 556140, 556170, C01B 400, C01B 600, C07F 990

Patent

active

061466085

ABSTRACT:
A metal hydride derivative wherein at least one hydrogen atom is replaced by deuterium (.sup.2.sub.1 H) or tritium (.sup.3.sub.1 H) isotope. The metal constituent of such metal hydride may be a Group III, IV or V metal or a transition metal, e.g., antimony, aluminum, gallium, tin, or germanium. The isotopically stabilized metal hydride derivatives of the invention are useful as metal source compositions for chemical vapor deposition, assisted chemical vapor deposition (e.g., laser-assisted chemical vapor deposition, light-assisted chemical vapor deposition, plasma-assisted chemical vapor deposition and ion-assisted chemical vapor deposition), ion implantation, molecular beam epitaxy, and rapid thermal processing.

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