Stable FET with shielding region in the substrate

Details Stable FET with shielding region in the substrate Stable FET with shielding region in the substrate

1996-11-22

1998-04-21

Tran, Minh-Loan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257281, 257282, H01L 2980

Patent

active

057420823

ABSTRACT:
A stable FET including a substrate structure with a doped layer formed as a portion of the substrate structure and defining an electrically conductive shielding region adjacent a surface of the substrate structure. A channel region is positioned on the shielding region and includes a plurality of epitaxial layers grown on the surface of the substrate structure in overlying relationship to the doped layer. A drain and a source are positioned on the channel region in spaced relationship from each other with a gate positioned in overlying relationship on the channel region between the drain and source. An externally accessible electrical contact is connected to the shielding region and to the source region to provide a path for the removal of internally generated charges, such as holes.

REFERENCES:
patent: 5289015 (1994-02-01), Chirovsky et al.

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