Stabilizing process for porous silicon and resulting light emitt

Details Stabilizing process for porous silicon and resulting light emitt Stabilizing process for porous silicon and resulting light emitt

1998-04-03

2000-01-25

Bowers, Charles

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

438505, 438960, 438962, 257 79, 257103, H01L 2120, H01L 3300

Patent

active

06017773&

ABSTRACT:
A method of producing light-emitting porous silicon light-emitting diode including forming a porous silicon p+ layer in a p-type silicon wafer, annealing the wafer at 800-950.degree. C. in an atmosphere of inert gas and 1-25% oxygen, depositing a polycrystalline silicon film on the porous silicon layer, and n+ doping a portion of the polycrystalline silicon film.

REFERENCES:
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"Thermal Nitridation of p-type Porous Silicon in Ammonia", Morazzani et al., Thin Solid Films 276 (1996), pp. 32-35.
"Visible Photoluminescence From Low Temperature Deposited Hydrogenated Amorphous Silicon Nitride", Aydinli et al., Solid State Communications, vol. 98, No. 4, pp. 273-277.
"Effects of Local Ambient Atmosphere on the Stability of Electroluminescent Porous Silicon Diodes", J. Appl. Phys. 77 (11), Jun. 1, 1995, pp. 5936-5941.
"Thermal Treatment Investigations of the Photovoltage of Porous Silicon", Wang et al., 27th International SAMPE Technical Conference, pp. 534-538.

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