Amplifiers – With semiconductor amplifying device – Including field effect transistor
Patent
1998-06-23
2000-04-18
Pascal, Robert
Amplifiers
With semiconductor amplifying device
Including field effect transistor
330290, 330302, H03F 316, H03F 130, H03F 304
Patent
active
060520299
ABSTRACT:
A capacitor is connected between the gate of an FET and an input node, and a resistor is connected between the input node and a ground terminal, thereby preventing the FET from oscillating in a low-frequency domain. A capacitor is connected between the drain of the FET and a ground terminal, or a line and a capacitor are connected in series between the drain of the FET and a ground terminal, thereby preventing the FET from oscillating in a high-frequency domain or at a specific frequency in the high-frequency domain.
REFERENCES:
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patent: 4225827 (1980-09-01), Davis, Jr.
patent: 5194826 (1993-03-01), Huusko
patent: 5229732 (1993-07-01), Furutani et al.
patent: 5548248 (1996-08-01), Wang
patent: 5592122 (1997-01-01), Marahiro et al.
patent: 5726606 (1998-03-01), Marland
Robert Soares, GaAs MESFET Circuit Design, pp. 79-88.
Max W. Medley, Microwave and RF Circuits; Analysis, Synthesis and Design, pp. 288-304.
F.J. Burkhard, Editor; R.P. Dolan, L.D. Shergalis, R.A. Erickson, Art Director, Hewlett-Parkard Journal, vol. 18, No. 6, pp. 33-34.
Nishida Masao
Uda Hisanori
Nguyen Patricia
Pascal Robert
Sanyo Electric Co,. Ltd.
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