Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Patent
1999-06-03
2000-10-10
Powell, William
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
156345, 216 88, 216 85, 438 8, 438745, H01L 2100
Patent
active
061301639
ABSTRACT:
A method of reducing agglomerated particles in a slurry for use in a chemical mechanical polishing (CMP) machine, the CMP machine also using deionized water, is disclosed. The method comprises the steps of: monitoring the pH of the slurry that is provided to the CMP machine; monitoring the pH of the deionized water that is provided to the CMP machine; and adjusting the pH of the deionized water to be substantially the same as the pH of the slurry.
REFERENCES:
patent: 4319923 (1982-03-01), Falanga et al.
patent: 5863838 (1999-06-01), Farkas et al.
patent: 5885334 (1999-03-01), Suzuki et al.
patent: 5922620 (1999-07-01), Shimomura et al.
Tsai Ching-feng
Wang Jiun-Fang
Yi Champion
Infineion AG
Mosel Vitelic Inc.
Powell William
ProMOS Technologies Inc.
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