Stabilization of precursors for thin film deposition

Organic compounds -- part of the class 532-570 series – Organic compounds – Heavy metal containing

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556146, 556 45, 556117, 556130, 4272481, C07F 100, C07F 1504, C07F 1506, C07F 306

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054121299

ABSTRACT:
A precursor used in an MOCVD reactor for production of thin films of certain metal oxides is stabilized by introducing a ligand into the precursor during the precursor synthesis and thereby protecting the precursor from premature oxidation, nucleation, and decomposition.

REFERENCES:
patent: 3911176 (1975-10-01), Curtis et al.
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George S. Hammond et al. "Chelates of .beta.-Diketones. V. Preparation and Properties of Chelates Containing Sterically Hindered Ligands", Feb. 1963, vol. 2 (1), pp. 73-76, Inorganic Chemistry.
R. Hiskes et al. "Single source metalorganic chemical vapor deposition of low microwave surface resistance YBa.sub.2 Cu.sub.3 O.sub.7 ", 29 Jul. 1991, vol. 59(5), pp. 606-607. Applied Physics Letters.
Alex A. Wernberg et al. "MOCVDDeposition of Epitaxial LiNbO.sub.3 Thin FIlms Using the Single-Source Precursor LiNb(OEt).sub.6 ", 1993, vol. 5 (8), pp. 1056-1058, Chem. Mater.
B. J. Curtis et al. "The Growth of Thim FIlms of Lithium niobate by Chemical Vapour Deposition", 1975, vol. 10, pp. 515-520, Mat. Res. Bull.

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