Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2006-04-18
2006-04-18
Mai, Son (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185020, C365S185280, C365S189090
Reexamination Certificate
active
07031191
ABSTRACT:
A method and an electronic device for stabilizing the voltage on the drain terminals of multi-level non-volatile memory cells during programming thereof. The voltage is provided by a drain voltage regulator having an output connected to the drain terminals at a common circuit node by a metal line conduction path having a parasitic intrinsic resistance. A feedback path is advantageously provided between the common circuit node and an input of the regulator.
REFERENCES:
patent: 5253201 (1993-10-01), Atsumi et al.
patent: 5546042 (1996-08-01), Tedrow et al.
patent: 5576990 (1996-11-01), Camerlenghi et al.
patent: 5815435 (1998-09-01), Van Tran
patent: 6040993 (2000-03-01), Chen et al.
patent: 6285614 (2001-09-01), Mulatti et al.
patent: 6456557 (2002-09-01), Dadashev et al.
patent: 6697288 (2004-02-01), Kim et al.
patent: 6795352 (2004-09-01), Tanzawa et al.
patent: 6873554 (2005-03-01), Nagatomo
patent: 2002/0101762 (2002-08-01), Nawaki et al.
patent: 0905710 (1999-03-01), None
Tietze, Halbleiter-Schaltungstechnik, 1974, Springer-Verlag, Berlin, pp. 383-388.
Crippa Luca
Ragone Giancarlo
Allen Dyer Doppelt Milbrath & Gilchrist, P.A.
Jorgenson Lisa K.
Mai Son
STMicroelectronics S.r.l.
LandOfFree
Stabilization method for drain voltage in non-volatile... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Stabilization method for drain voltage in non-volatile..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Stabilization method for drain voltage in non-volatile... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3537424