ST-RAM magnetic element configurations to reduce switching...

Details ST-RAM magnetic element configurations to reduce switching... ST-RAM magnetic element configurations to reduce switching...

2011-08-16

2011-08-16

Nguyen, Dao H (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

C257S422000, C257S428000, C257SE43004, C257SE43005, C257SE43006, C360S324100, C360S324110, C360S324120, C365S145000, C365S158000, C365S171000

Reexamination Certificate

active

07999336

ABSTRACT:
In order to increase an efficiency of spin transfer and thereby reduce the required switching current, a current perpendicular to plane (CPP) magnetic element for a memory device includes either one or both of a free magnetic layer, which has an electronically reflective surface, and a permanent magnet layer, which has perpendicular anisotropy to bias the free magnetic layer.

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