Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1997-03-05
1998-11-24
Wallace, Valencia
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257 67, 257369, 257377, 257903, H01L 2976, H01L 31036, H01L 2711
Patent
active
058411534
ABSTRACT:
The present invention provides an improved static random access memory which can be manufactured into values as designed by photolithography. Second direct contract for connecting active region and ground line for first and second memory cells is provided at a boundary between the first memory cell and second memory cell. Second direct contact is divided into a plurality of portions.
REFERENCES:
patent: 5296729 (1994-03-01), Yamanaka et al.
patent: 5382807 (1995-01-01), Tsutsumi et al.
patent: 5572480 (1996-11-01), Ikeda et al.
Ohkubo et al., 16 Mbit SRAM Cell Technologies for 2.0 V Operation, IEDM, pp. 17.5.1-17.5.4, 1991.
A Split Worldline Cell for 16Mb SRAM Using Polysilicon Sidewall Contacts, Kazuo Itabashi et al., IEDM 91, pp. 477-484.
A 2V-Supply Voltage 16 mb SRAM Cell with Load-Lock-CVD Poly and DCS-WSIX Technologies, A Kawamura et al., 1993 Symposium on VLSI TEchnology, pp. 67-68.
Ishida Masahiro
Ishigaki Yoshiyuki
Kuriyama Hirotada
Mitsubishi DenkiKabushiki Kaisha
Wallace Valencia
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