SRAM ring oscillator

Details SRAM ring oscillator SRAM ring oscillator

2006-11-28

2006-11-28

Lee, Benny (Department: 2817)

Oscillators

Ring oscillators

C331S044000, C324S765010

Reexamination Certificate

active

07142064

ABSTRACT:
An SRAM design evaluation circuit topology has the gates of the SRAM cell pass Gate Field Effect Transistors (FETs) connected to the cross-coupled gates of the inverter pair of the SRAM cell. This evaluation circuit typology is used in a full cell implementation. A series of full cells are interconnected one to another in a loop to form a ring oscillator. The output of the ring is frequency divided and measured to study the read and write behavior of the cell design. Similarly, half-cells, with the gates of their pass gates grounded, are interconnected one to another to form a ring oscillator, the output of which is frequency divided and measured to help isolate pass gate impact on memory function. The modified SRAM cell topology, connected as a ring oscillator in hardware, can be used to fully characterize an SRAM cell design, without the use of peripheral read/write circuitry.

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