SRAM memory device having reduced size

Details SRAM memory device having reduced size SRAM memory device having reduced size

1997-11-25

2000-02-29

Chaudhuri, Olik

Compositions

Soaps

438199, 252903, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

060305487

ABSTRACT:
A semiconductor memory device is provided that can have the memory cell size reduced and electrical imbalance eliminated. This semiconductor memory device has gate electrodes of a driver transistor and a load transistor formed of a first polysilicon layer, and a word line also serving as a gate electrode of an access transistor formed of a different layer of a second polysilicon layer. Therefore, the gate electrodes of the driver transistor and the load transistor can be overlapped with each other in a planar manner with the word line, resulting in reduction in the planar area of the memory cell. In a cell current path, a contact portion other than a bit line contact and a GND contact is not provided. Therefore, electrical imbalance in memory cells is prevented.

REFERENCES:
patent: 5166902 (1992-11-01), Silver
patent: 5294822 (1994-03-01), Verrett
patent: 5341327 (1994-08-01), Kuriyama
patent: 5382807 (1995-01-01), Tsutsumi et al.
patent: 5404326 (1995-04-01), Okamoto
patent: 5436506 (1995-07-01), Kim et al.
patent: 5486717 (1996-01-01), Kokubo et al.
patent: 5521416 (1996-05-01), Matsuoka et al.
patent: 5572469 (1996-11-01), Anami et al.
patent: 5654572 (1997-08-01), Kawase
patent: 5841153 (1998-11-01), Kuriyama et al.
Fumitomo Matsuoka et al., High-Density Full-CMOS SRAM Cell Technology with a Deep Sub-Micron Spacing between nMOS and pMOSFET, IEICE Trans. Election., vol. E77-C, No. 8, Aug. 1994, pp. 1385-1394.

Affiliated with

Also associated with

Rating

SRAM memory device having reduced size does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with SRAM memory device having reduced size, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and SRAM memory device having reduced size will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-679817