Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2005-03-08
2005-03-08
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S903000, C257S904000, C438S149000, C438S151000, C438S157000, C438S166000
Reexamination Certificate
active
06864506
ABSTRACT:
SRAM cell and method for fabricating the same, the SRAM cell including a first local interconnection connected between first terminals of the first access transistor, the first load transistor, and the first drive transistor, and gates of the second load transistor, and the second drive transistor electrically, and a second local interconnection connected between first terminals of the second access transistor, the second load transistor, and the second drive transistor, and gates of the first load transistor, and the first drive transistor electrically, thereby reducing an area of the SRAM cell.
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patent: 6229186 (2001-05-01), Ishida
patent: 6236117 (2001-05-01), Ishigaki et al.
Perera, Asanga H., et al. IEEE. vol. 23, No. 4, pp. 571-574, 2000.
Sun, S. W. IEEE. pp. 52-55, 1998.
Young, K. K. vol. 23, No. 2, pp. 563-566, 2000.
Choi Sung Wook
Kim Sung Jin
Flynn Nathan J.
Wilson Scott R.
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