SRAM cell

Details SRAM cell SRAM cell

2008-01-22

2008-01-22

McKinnon, Terrell L. (Department: 2809)

Semiconductor device manufacturing: process

Making passive device

C438S382000, C438S393000, C438S226000, C257S393000, C257SE27101, C257SE27098

Reexamination Certificate

active

11305553

ABSTRACT:
A method for forming a resistor of high value in a semiconductor substrate including forming a stack of a first insulating layer, a first conductive layer, a second insulating layer, and a third insulating layer, the third insulating layer being selectively etchable with respect to the second insulating layer; etching the stack, to expose the substrate and keep the stack in the form of a line; forming insulating spacers on the lateral walls of the line; performing an epitaxial growth of a single-crystal semiconductor on the substrate, on either side of the line; selectively removing the third insulating layer to partially expose the second insulating layer at a predetermined location; and depositing and etching a conductive material to fill the cavity formed by the previous removal of the third insulating layer.

REFERENCES:
patent: 4377819 (1983-03-01), Sakai et al.
patent: 5825684 (1998-10-01), Lee
patent: 5880497 (1999-03-01), Ikeda et al.
patent: 6130154 (2000-10-01), Yokoyama et al.
patent: 2004/0164360 (2004-08-01), Nishida et al.
patent: 09275150 (1997-10-01), None
French Search Report from French Patent Application 04/53012, filed Dec. 16, 2004.

Affiliated with

Also associated with

Rating

SRAM cell does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with SRAM cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and SRAM cell will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3937554