Sputtering targets of high-purity aluminum or alloy thereof

Details Sputtering targets of high-purity aluminum or alloy thereof Sputtering targets of high-purity aluminum or alloy thereof

1994-12-27

1995-10-10

Breneman, R. Bruce

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

20429812, 148688, C23C 1434

Patent

active

054568153

ABSTRACT:
A sputtering target of a high-purity Al or Al alloy having (1) a target crystal structure as a recrystallization structure and average grain diameters in various portions of 500 .mu.m or less, with dispersions within .+-.15%, and (2) a {200} crystalline orientation content ratio on the sputtering surface of at least 0.35 in various portions of the target, with dispersions within .+-.15%, said {200} crystalline orientation content ratio being defined by the following formula: ##EQU1## where I.sub.{200}, I.sub.{111}, I.sub.{220} and I.sub.{311} are peak strengths for (200), (111), (220) and (311) crystal planes, respectively, as obtained X-ray diffraction method. Simultaneous realization of (1)+(2) is desirable. For these purposes, uniform warm or cold working to a desired final geometry below the recrystallization temperature must be followed by uniform heat treatment throughout the target at the recrystallization temperature of the material to finish the recrystallization.

REFERENCES:
patent: 5087297 (1992-02-01), Poliquen
"Crystallographic target effect in magnetron sputtering" Wickersham, Jr. J. Vac. Sci. Tech. A5(4) Jul./Aug. 1987.

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