Sputtering target with few surface defects, and surface...

Details Sputtering target with few surface defects, and surface... Sputtering target with few surface defects, and surface...

2011-03-22

2011-03-22

Wyszomierski, George (Department: 1733)

Metal treatment

Process of modifying or maintaining internal physical...

With casting or solidifying from melt

C148S425000, C204S298130, C029S527600

Reexamination Certificate

active

07909949

ABSTRACT:
Provided is a surface processing method of a sputtering target, wherein a target surface in which intermetallic compounds, oxides, carbides, carbonitrides and other substances without ductility exist in a highly ductile matrix phase at a volume ratio of 1 to 50% is preliminarily subject to the primary processing of cutting work, then subsequently subject to finish processing via polishing. The sputtering target subject to this surface processing method is able to improve the target surface having numerous substances without ductility, and prevent or suppress the generation of nodules and particles upon sputtering.

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English translation of Ueno JP 2002-069623, published Mar. 8, 2002, 26 pages total.
English translation of Ueno JP 2002-208125, published Jul. 28, 2002, 23 pages total.
Esp@cenet database, one page English Abstract of JP 03-257158, Nov. 1991.

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