Sputtering target, thin film for optical information...

Compositions – Electrically conductive or emissive compositions – Metal compound containing

Reexamination Certificate

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C252S519500, C252S518100, C252S519100

Reexamination Certificate

active

07635440

ABSTRACT:
Provided is a sputtering target having a relative density of 80% or more and containing a compound having as its principal component zinc oxide satisfying AXBYO(KaX+KbY)/2(ZnO)m, 1<m, X≦m, 0<Y≦0.9, X+Y=2, where A and B are respectively different positive elements of trivalence or more, and the valencies thereof are respectively Ka and Kb. Obtained is a ZnO based sputtering target which does not contain ZnS and SiO2, and, upon forming a film via sputtering, is capable of reducing the affect of heating the substrate, of performing high speed deposition, of adjusting the film thickness to be thin, of reducing the generation of particles (dust) and nodules during sputtering, of improving the productivity with small variation in quality, and which has fine crystal grains and a high density of 80% or more, particularly 90% or more.

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Minami et al., “New Transparent Conducting ZnO-In2O3-SnO2Thin Films Prepared by Magnetron Sputtering”, Thin Solid Films, vol. 317, pp. 318-321, 1998, month unknown.
Esp@cenet, One Page English Abstract of JP 2000-026119, Jan. 2000.
Esp@cenet, One Page English Abstract of JP 2000-044236, Feb. 2000.

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