Sputtering target, thin film for optical information...

Compositions – Electrically conductive or emissive compositions – Metal compound containing

Reexamination Certificate

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C252S519500, C252S518100, C252S519100, C427S255330, C427S126300, C427S595000, C427S580000, C427S576000, C427S587000, C427S592000, C427S593000, C427S162000, C427S248100, C204S192150, C428S701000

Reexamination Certificate

active

07897068

ABSTRACT:
A sputtering target is provided that has a relative density of 80% or more and contains a compound having as its principal component zinc oxide satisfying AXBYO(KaX+KbY)/2(ZnO)m, 1<m, X≦m, 0<Y≦0.9, X+Y=2, where A and B are respectively different positive elements of trivalence or more, and the valencies thereof are respectively Ka and Kb. A ZnO based sputtering target is obtained which does not contain ZnS and SiO2, and, upon forming a film via sputtering, is capable of reducing the affect of heating the substrate, of performing high speed deposition, of adjusting the film thickness to be thin, of reducing the generation of particles (dust) and nodules during sputtering, of improving the productivity with small variation in quality, and which has fine crystal grains and a high density of 80% or more, particularly 90% or more.

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One Page English Language Abstract of JP 2000-026119 A, Jan. 25, 2000.

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