Sputtering target producing very few particles, backing...

Details Sputtering target producing very few particles, backing... Sputtering target producing very few particles, backing...

2006-10-03

2006-10-03

McDonald, Rodney G. (Department: 1753)

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

C204S298120, C219S068000, C219S069110, C216S012000, C216S096000, C216S100000, C216S101000, C216S102000

Reexamination Certificate

active

07115193

ABSTRACT:
Provided is a sputtering target, backing plate or apparatus inside a sputtering device in which an electrical discharge machining mark is formed on the face to which unwanted films during sputtering are deposited, and the electrical discharge machining mark is formed from numerous inclined protrusions having a depression angle of less than 90°. When necessary, chemical etching is further performed to the portions subject to such electrical discharge machining. Thereby, the separation and flying of deposits arising from the face to which unwanted films of the target, backing plate and apparatus inside the sputtering device are deposited can be prevented.

REFERENCES:
patent: 5632869 (1997-05-01), Hurwitt et al.
patent: 6506312 (2003-01-01), Bottomfield
patent: 09-038831 (1997-02-01), None
patent: 11-131224 (1999-05-01), None
Machine Translation of 11-131224.
Tatsuo Asamaki, Hakumaku Sakusei no Kiso (3rdedition), The Nikkan Kogyo Shimbun, Ltd., pp. 136-144, Mar. 1996, (includes partial English translation of p. 139 under the subheading “The Effect of Etching”).
Patent Abstracts of Japan, One page English Abstract of JP 11-131224.
Patent Abstracts of Japan, One page English Abstract of JP 09-038831.

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