Sputtering target of single crystal aluminum alloy and method fo

Details Sputtering target of single crystal aluminum alloy and method fo Sputtering target of single crystal aluminum alloy and method fo

1998-06-30

1999-11-23

Nguyen, Nam

Metal founding

Process

Shaping liquid metal against a forming surface

164484, 1641222, 20429813, B22D 11128, B22D 710, C23C 1434

Patent

active

059882620

ABSTRACT:
A sputtering target of a single crystal aluminum alloy which has a uniform concentration distribution of an added metal element and a controlled crystal orientation is prepared using a continuous casting apparatus equipped with a starting rod by solidifying a melt of aluminum having a purity of at least 99.9 wt. % which contains 0.1 to 3.0 wt. % of at least one metal element selected from the group consisting of elements having atomic numbers of 3 to 83, at a casting temperature of 670 to 850.degree. C. at a casting rate of 1 to 80 mm/min. in one direction with maintaining an angle between a center axis of a continuous casting mold and a direction of pulling a casting material at 2 degrees or less.

REFERENCES:
patent: 4231817 (1980-11-01), Takeuchi et al.
patent: 4665970 (1987-05-01), Ohno
patent: 5087297 (1992-02-01), Pouliquen
patent: 5456815 (1995-10-01), Fukuyo et al.
Wickersham, Jr. "Crystallographic . . . sputtering", J. Vac. Sci. Technol. A 5(4), Jul./Aug. 1987 pp. 1755-1758.

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