Sputtering target of single crystal aluminum alloy

Details Sputtering target of single crystal aluminum alloy Sputtering target of single crystal aluminum alloy

1997-02-04

1999-05-25

Nguyen, Nam

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

20419212, C23C 1434

Patent

active

059067179

ABSTRACT:
A sputtering target of a single crystal aluminum alloy which has a uniform concentration distribution of an added metal element and a controlled crystal orientation is prepared using a continuous casting apparatus equipped with a starting rod by solidifying a melt of aluminum having a purity of at least 99.9 wt. % which contains 0.1 to 3.0 wt. % of at least one metal element selected from the group consisting of elements having atomic numbers of 3 to 83, at a casting temperature of 670 to 850.degree. C. at a casting rate of 1 to 80 m/min. in one direction with maintaining an angle between a center axis of a continuous casting mold and a direction of pulling a casting material at 2 degrees or less.

REFERENCES:
patent: 5087297 (1992-02-01), Pouliquen
patent: 5456815 (1995-10-01), Fukuyo et al.
Wickersham, Jr., "Crystallographic . . . sputtering", J. Vac. Sci. Technol. A5(4), Jul./Aug. 1987, pp. 1755-1758.

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