Sputtering target, method of producing the target, optical recor

Details Sputtering target, method of producing the target, optical recor Sputtering target, method of producing the target, optical recor

1997-10-03

2000-10-03

Evans, Elizabeth

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428 642, 428 644, 428 645, 428913, 43027013, 4304951, 430945, 369283, 369288, B32B 300

Patent

active

061270164

ABSTRACT:
A sputtering target for fabricating a recording layer of a phase-change type optical recording medium contains a compound or mixture including as constituent elemets Ag, In, Te and Sb with the respective atomic percent (atom. %) of .alpha., .beta., .gamma. and .delta. thereof being in the relationship of 2.ltoreq..alpha..ltoreq.30, 3.ltoreq..beta..ltoreq.30, 10.ltoreq..gamma..ltoreq.50, 15.ltoreq..delta..ltoreq.83 and .alpha.+.beta.+.gamma.+.delta.=100, and a method of producing the above sputtering target is provided. A phase-change type optical recording medium includes a recording layer containing as constituent elements Ag, In, Te and Sb with the respective atomic percent of .alpha., .beta., .gamma. and .delta. thereof being in the relationship of 0<.alpha..ltoreq.30, 0<.beta..ltoreq.30, 10.ltoreq..gamma..ltoreq.50, 10.ltoreq..delta..ltoreq.80, and .alpha.+.beta.+.gamma.+.delta.=100, and is capable of recording and erasing information by utilizing the phase changes of a recording material in the recording layer. A method of fabricating the above phase-change type optical recording medium is also provided.

REFERENCES:
patent: 5011723 (1991-04-01), Harigaya et al.
patent: 5024927 (1991-06-01), Yamada et al.
patent: 5080947 (1992-01-01), Yamada et al.
patent: 5100700 (1992-03-01), Ide et al.
patent: 5156693 (1992-10-01), Ide et al.
Patent Abstracts of Japan. vol. 018 No. 496 (M-1674, Sep. 16, 1994 & JP-A-06 166268 (RICOH CO. LTD) Jun. 14, 1994 *abstract*.
Database WPI Section Ch. Week 8632 Derwent Publications Ltd., London, GB; Class M13, AN 86-207922. & JP-A-61 139 637 (Hitachi Metal KK), Jun. 26, 1986 *abstract*.

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