Sputtering target, method for producing same, sputtering...

Details Sputtering target, method for producing same, sputtering... Sputtering target, method for producing same, sputtering...

2006-07-03

2011-10-04

Young, Christopher (Department: 1721)

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

C264S109000, C419S019000

Reexamination Certificate

active

08029655

ABSTRACT:
Provided is a sputtering target which can give a high water barrier property and a high flexibility to a sputtering film, can keep a high film forming rate certainly in sputtering, and can make damages to an objective substance wherein a film is to be formed as small as possible. In order to realize this, a mixed powder which contains 20 to 80% by weight of a SiO powder, the balance of the powder being made of a TiO2powder and/or a Ti powder, is pressed and sintered. The sintered body has a composition of SiαTiβOγ wherein α, β and γ are mole ratios of Si, Ti and O, respectively, and the ratio of α/β ranges from 0.45 to 7.25 and the ratio of γ/(α+β) ranges from 0.80 to 1.70.

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