Sputtering target material and process for producing the same

Details Sputtering target material and process for producing the same Sputtering target material and process for producing the same

1985-08-27

1986-10-28

Lechert, Jr., Stephen J.

Specialized metallurgical processes, compositions for use therei

Compositions

Consolidated metal powder compositions

204291, 204292, 419 10, 419 23, 419 27, 419 66, 428446, 501 96, 501154, C22C 2900

Patent

active

046196978

ABSTRACT:
A novel target material for use in the sputter formation of a metal silicide film in electrode wiring in a semiconductor device, and a process for producing such target material are disclosed.
The process for producing the target material is characterized by first impregnating molten silicon into a calcined body containing at least one silicide forming metal component and a silicon component and then forming a sintered body with a reduced oxygen content containing both a metal silicide and silicon.
The target material prepared in accordance with the invention is extremely low not only in oxygen content but also in the concentrations of other impurities and has high deflective strength as compared with the conventional sintered target.
The film formed by sputtering the target of the invention has appreciably reduced impurity levels and hence, very low electric resistivities. The target of the invention enables sputtering to be performed 5 times as fast as in the case using the conventional sintered target.

REFERENCES:
patent: 3285017 (1966-11-01), Henderson et al.
patent: 4364100 (1982-12-01), Edmonds et al.
patent: 4558017 (1985-12-01), Gupta et al.

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