Sputtering target material

Details Sputtering target material Sputtering target material

2005-04-05

2005-04-05

McDonald, Rodney G. (Department: 1753)

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

C204S298130, C148S430000, C420S461000, C420S462000, C420S466000

Reexamination Certificate

active

06875324

ABSTRACT:
The present invention is directed to a precious metal sputtering target having a columnar crystallographic microstructure such that crystals are grown in a direction normal to the sputtering surface in order to solve conventional problems. The high-purity sputtering target of the present invention prevents chipping of a minute cluster mass that occurs in a sputtering target produced through casting or powder metallurgy; produces thin film of excellent quality; and has considerably reduced internal defects.

REFERENCES:
patent: 4274926 (1981-06-01), Simon et al.
patent: 5324406 (1994-06-01), Anderson et al.
patent: 5936257 (1999-08-01), Kusunoki et al.
patent: 286175 (1988-10-01), None
patent: 4-333587 (1992-11-01), None
patent: 7-332494 (1995-12-01), None
patent: 8-67974 (1996-03-01), None
patent: 8-250427 (1996-09-01), None
patent: 9-41131 (1997-02-01), None
patent: 11-158612 (1999-06-01), None
Hackh's Chemical Dictionary, p 543.

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