Sputtering target for producing optical recording medium

Details Sputtering target for producing optical recording medium Sputtering target for producing optical recording medium

1995-12-12

1998-07-28

Weisstuch, Aaron

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

20419226, 428 645, C23C 1434

Patent

active

057858284

ABSTRACT:
A sputtering target for fabricating a recording layer of a phase-change type optical recording medium contains a compound or mixture including as constituent elements Ag, In, Te and Sb with the respective atomic percent (atom.%) of .alpha., .beta., .gamma.and .delta.thereof being in the relationship of 2.ltoreq..alpha..ltoreq.30, 3.ltoreq..beta..ltoreq.30, 10.ltoreq..gamma..ltoreq.50, 15.ltoreq..delta..ltoreq.83 and .alpha.+.beta.+.gamma.+.delta.=100, and a method of producing the above sputtering target is provided. A phase-change type optical recording medium includes a recording layer containing as constituent elements Ag, In, Te and Sb with the respective atomic percent of .alpha., .beta., .gamma.and .delta.thereof being in the relationship of 0<.alpha..ltoreq.30, 0<.beta..ltoreq.30, 10.ltoreq..gamma..ltoreq.50, 10.ltoreq..delta..ltoreq.80, and .alpha.+.beta.+.gamma.+.delta.=100, and is capable of recording and erasing information by utilizing the phase changes of a recording material in the recording layer. A method of fabricating the above phase-change type optical recording medium is also provided.

REFERENCES:
patent: 5011723 (1991-04-01), Harigaya et al.
patent: 5024927 (1991-06-01), Yamada et al.
patent: 5080947 (1992-01-01), Yamada et al.
patent: 5100700 (1992-03-01), Ide et al.
patent: 5156693 (1992-10-01), Ide et al.
Patent Abstracts of Japan. vol. 018 No. 496 (M-1674, 16 Sep. 1994 & JP-A-06-166268 (Ricoh Co. Ltd) 14 Jun. 1994 *abstract*.
Database WPI Section Ch. Week 8632 Derwent Publications Ltd., London, GB; Class M13, AN 86-207922 & JP-A-61-139 637 (Hitachi Metal KK), 26 Jun. 1986 *abstract*.

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