Sputtering target for producing electroconductive transparent fi

Details Sputtering target for producing electroconductive transparent fi Sputtering target for producing electroconductive transparent fi

1989-05-16

1992-11-03

Derrington, James

Plastic and nonmetallic article shaping or treating: processes

Pore forming in situ

By mechanically introducing gas into material

264 86, 2643282, 264570, 501134, 501126, C04B 3328

Patent

active

051606755

ABSTRACT:
A sputter target for producing electroconductive transparent films, which comprises indium oxide and tin oxide and having a shape such that not less than 80% by weight of the target is present in an erosion area on sputtering, and a process for manufacturing the sputtering target which comprises molding a slurry or a powder mixture containing indium oxide and tin oxide into a molded shape and sintering the molded shape are disclosed.

REFERENCES:
patent: 3330892 (1967-07-01), Herrman
patent: 4647548 (1987-03-01), Klein
patent: 4962071 (1990-10-01), Bayard
Budworth et al, An Introduction to Ceramic Science, Pergamon Press, 1970, pp. 2-3 and 264-267.
Japanese Journal of Applied Physics, vol. 17, No. 7, Jul 1978, K. Itoyama, "Properties of Sn-Doped Indium Oxide Prepared . . . ", pp. 1191-1196.

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