Metal founding – Process – Shaping liquid metal against a forming surface
Reexamination Certificate
2006-09-21
2009-02-03
Lin, Kuang (Department: 1793)
Metal founding
Process
Shaping liquid metal against a forming surface
C164S076100
Reexamination Certificate
active
07484546
ABSTRACT:
The present invention provides a sputtering target for a phase change memory and a phase change memory film formed with such a target, and the manufacturing method thereof, characterized in that the sputtering target is composed from elements of not less than a three component system and has as its principal component one or more components selected from stibium, tellurium and selenium, and the compositional deviation in relation to the intended composition is ±1.0 at % or less. This sputtering target for a phase change memory is capable of reducing, as much as possible, impurities that cause the reduction in the number of times rewriting can be conducted as a result of such impurities segregating and condensing in the vicinity of the boundary face of the memory point and non-memory point; in particular, impurity elements that affect the crystallization speed, reducing the compositional deviation of the target in relation to the intended composition, and improving the rewriting properties and crystallization speed of a phase change memory by suppressing the compositional segregation of the target.
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Unpublished Co-pending U.S. Appl. No. 11/722,218 (cited for consideration of Double Patenting Issues).
Unpublished Co-pending U.S. Appl. No. 11/813,694 (cited for consideration of Double Patenting Issues).
Shindo Yuichiro
Takami Hideo
Yahagi Masataka
Howson & Howson LLP
Lin Kuang
Nippon Mining & Metals Co., Ltd.
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