Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Reexamination Certificate
2007-01-02
2007-01-02
King, Roy (Department: 1742)
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
Reexamination Certificate
active
10504739
ABSTRACT:
The present invention provides a sputtering target for a phase change memory and a phase change memory film formed with such a target, and the manufacturing method thereof, characterized in that the sputtering target is composed from elements of not less than a three component system and has as its principal component one or more components selected from stibium, tellurium and selenium, and the compositional deviation in relation to the intended composition is ±1.0 at % or less. This sputtering target for a phase change memory is capable of reducing, as much as possible, impurities that cause the reduction in the number of times rewriting can be conducted as a result of such impurities segregating and condensing in the vicinity of the boundary face of the memory point and non-memory point; in particular, impurity elements that affect the crystallization speed, reducing the compositional deviation of the target in relation to the intended composition, and improving the rewriting properties and crystallization speed of the phase change memory by suppressing the compositional segregation of the target.
REFERENCES:
patent: 4842706 (1989-06-01), Fukasawa et al.
patent: 62-114137 (1987-05-01), None
patent: 63-100632 (1988-05-01), None
patent: 03-162570 (1991-07-01), None
patent: 05-047053 (1993-02-01), None
patent: 5-47053 (1993-02-01), None
Patent Abstracts of Japan, 1 page English Abstract of JP 03-162570, Jul. 1991.
Patent Abstracts of Japan, 1 page English Abstract of JP 63-100632, May 1998.
Patent Abstracts of Japan, 1 page English Abstract of JP 62-114137, May 1987.
Patent Abstracts of Japan, 1 page English Abstract of JP 05-047053, Feb. 1993.
Shindo Yuichiro
Takami Hideo
Yahagi Masataka
Alexander Michael P.
Howson & Howson
King Roy
Nippon Mining & Metals Co., Ltd.
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