Sputtering target assembly production method

Metal fusion bonding – Process – Diffusion type

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Details

2282341, 2282625, 22826271, 148535, B23K 2000, B23K 3102, B23K 119, C22F 109

Patent

active

060859660

ABSTRACT:
A method for producing a sputtering target assembly consisting of a target member used for sputtering and a backing plate bonded to the target member, which assembly has a high adherence strength and a high bonding strength as well as a sufficient tensile strength even under a high temperature. When producing a sputtering target assembly consisting of a target member used for sputtering and a backing plate bonded to the target member, bonding surfaces of the target member and the backing plate are made flat so as to have an arithmetic mean roughness Ra of 0.01 to 1.0 .mu.m before carrying out solid phase diffusion bonding between the target member and the backing plate.

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Japanese Industrial Standard JIS B 0601-1994.

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