Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Patent
1994-09-14
1997-12-02
Breneman, R. Bruce
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
20429813, 428652, 428660, 428662, 428663, 428661, 428673, 428680, 428674, C23C 1434
Patent
active
056932030
ABSTRACT:
A sputtering target assembly composed of a sputtering target and a backing plate with or without an insert or inserts interposed therebetween as necessary characterized by having solid-phase bonded interface accompanied with no appreciable thermal diffusion layer and by said sputtering target substantially maintaining the quality characteristics including metallurgical characteristics and properties that the sputtering target had before it was bonded to the backing plate intact. The sputtering target assembly is obtained by solid-phase bonding the target and backing plate, with or without one or more insert sandwiched therebetween, at a low temperature and a low pressure under a vacuum. The solid-phase bonded interface gives reliable bonds of a bonded area percentage of 100% without non-bonded portions such as pores. The uniformity of microstructure and crystal orientation etc. of a target material is maintained intact with the suppression of crystal grain growth.
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Patent Abstracts of Japan, C section, vol. 16, No. 419, Sep. 3, 1992, The Patent Office Japanese Government, No. 04-143 268 (Fujitsu Ltd), p. 38 C 981.
Patent Abstracts of Japan, C section, vol. 16, No. 419, Sep. 3, 1992, The Patent Office Japanese Government, No. 04-143 269 (Fujitsu Ltd), p. 38 C 981.
Fukushima Atsushi
Fukuyo Hideaki
Nagasawa Masaru
Nakamura Kenichirou
Ohhashi Tateo
Breneman R. Bruce
Japan Energy Corporation
McDonald Rodney G.
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