Sputtering target and production method thereof

Details Sputtering target and production method thereof Sputtering target and production method thereof

1997-12-03

2000-02-15

Gupta, Yogendra

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

20429813, 2041921, 420417, 148421, C23C 1400, C22C 1400

Patent

active

060248521

ABSTRACT:
The present invention provides a sputtering target which generates a reduced quantity of particles during a sputtering and a method for producing such a sputtering target.
Mirror treatment is carried out to a sputter surface 2 which is sputtered when forming a thin film, so that the sputter surface 2 has an arithmetic mean roughness Ra of 0.01 .mu.m or below. A sputtering target 1 with such a smooth sputter surface 2 having a small surface roughness enables to reduce a number of particles generated during a sputtering.

REFERENCES:
patent: 5178739 (1993-01-01), Barnes et al.
patent: 5447616 (1995-09-01), Satou et al.
patent: 5676803 (1997-10-01), Demaray et al.

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