Sputtering target and process for producing the same

Details Sputtering target and process for producing the same Sputtering target and process for producing the same

2008-03-18

2008-03-18

Kopec, Mark (Department: 1796)

Compositions

Electrically conductive or emissive compositions

Metal compound containing

C252S521100, C204S192150

Reexamination Certificate

active

07344660

ABSTRACT:
A manufacturing method of a sputtering target having mainly oxychalcogenide containing La and Cu by sintering at least one or more powders selected from an elementary substance of a constituent element, oxide or chalcogenide as the raw material, characterized in including a reaction step of retaining the [material] at a temperature of 850° C. or less for 1 hour or more during the sintering step, wherein this [material], after the reaction step, is subject to pressure sintering at a temperature that is higher than the reaction step temperature. In addition to increasing the density of a P-type transparent conductive material target having mainly oxychalcogenide containing La and Cu and enabling the enlargement of the target at a low manufacturing cost, the existence of unreacted matter in the target can be eliminated, the production yield can be improved by suppressing the generation of cracks in the target, and the quality of deposition formed by sputtering this kind of target can also be improved.

REFERENCES:
patent: 6582535 (2003-06-01), Suzuki et al.
patent: 6656260 (2003-12-01), Ueno et al.
Ohki et al “Preparation and crystal structure analysis and physical properties of (LaO)CuTe”, Journal of Alloys and Compounds 408-412 (2006) 98-100.
Ueda et al., “Transparent p-type Semiconductor: LaCuOS Layered Oxysulfide”, Applied Physics Letters, vol. 77, No. 17, pp. 2701-2703, Oct. 2000.
Ueda et al., “Crystal Structure of LaCuOS1−xSexOxychalogenides”, Thin Solid Films, vol. 411, pp. 115-118, 2002, month unknown.

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