Sputtering target and method of manufacturing the same

Details Sputtering target and method of manufacturing the same Sputtering target and method of manufacturing the same

1994-11-21

1996-04-16

Walsh, Donald P.

Powder metallurgy processes

Powder metallurgy processes with heating or sintering

Powder pretreatment

419 45, 419 54, 419 60, B22F 100

Patent

active

055080006

ABSTRACT:
According to the present invention, silicide grains are coupled with each other in a linked manner so as to provide a metal silicide phase, and grains forming a Si phase are dispersed in the gaps of the metal silicide phase discontinuously so as to provide a mixed structure of a sputtering target of high density and containing carbon at a rate less than 100 ppm. Because of the high density and high strength of the target, generation of particles at the time of sputtering can be reduced, and because of the reduced content of carbon, mixing of carbon in a thin film formed by the sputtering can be prevented.

REFERENCES:
patent: 4941920 (1990-07-01), Inui et al.
patent: 5002728 (1991-03-01), Achikita et al.

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