Sputtering target and method for producing same

Details Sputtering target and method for producing same Sputtering target and method for producing same

1993-11-23

1995-07-25

Mai, Ngoclan T.

Specialized metallurgical processes, compositions for use therei

Compositions

Consolidated metal powder compositions

252518, 501134, C22C 2912

Patent

active

054358264

ABSTRACT:
A sputtering target having a relative density of 90% or more and a single-phase structure for forming a indium-tin oxide layer of low resistance is produced by pressing a composite powder of indium oxide and tin oxide having an average diameter of 0.1 .mu.m or less and a tin content controlled to 1.5-6 weight %; and sintering the pressed composite powder at 1500.degree.-1700.degree. C. in an oxygen atmosphere pressurized at 1-10 atm.

REFERENCES:
patent: 4962071 (1990-10-01), Bayard
patent: 5071800 (1991-12-01), Iwamoto et al.
patent: 5094787 (1992-03-01), Nakajima et al.

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