Sputtering target and method for manufacturing thereof

Stock material or miscellaneous articles – All metal or with adjacent metals – Surface feature

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

20419215, 20429812, 20429813, C23C 1434

Patent

active

061533157

ABSTRACT:
The surface roughness of a sputtering target is controlled and the amount of residual contaminants, the hydrogen content, and the thickness of a surface damage layer are reduced, in order to homogenize the thickness of a film formed on a substrate by sputtering and prevent and suppress nodule production to reduce particle production during sputtering. A sputtering target with the surface roughness (Ra) not more than 1.0 .mu.m, the total amount of contaminants, metal elements with a high melting point other than the major component and alloy components and Si, Al, Co, Ni, and B, not more that 500 ppm, the hydrogen content of the surface not more than 50 ppm, and the thickness of a surface damage layer not more than 50 .mu.m is provided, which is manufactured by precision machining, preferably, with the use of a diamond turning tool.

REFERENCES:
patent: 4663120 (1987-05-01), Parent et al.
patent: 4750932 (1988-06-01), Parent et al.
patent: 5294321 (1994-03-01), Satou et al.
patent: 5409517 (1995-04-01), Satou et al.
patent: 5418071 (1995-05-01), Satou et al.
patent: 5460793 (1995-10-01), Kano et al.
patent: 5464520 (1995-11-01), Kano et al.
patent: 5630918 (1997-05-01), Takahara et al.
patent: 5887481 (1999-03-01), Leroy et al.
English Abstract of the Japanese publication No. 03-257158 (Derwent) (no date).
English Abstract of the Japanese publication No. 03-257158 (Dialog) (no date).
Ishigami et al., "High Purity Ti Sputter Target for VLSIs", Toshiba Review, No. 161, pp. 38-41, Autumn 1987.
A. Abel et al., "Preparation and Characterization of Pure Metals", Metals Handbook, 10.sup.th Edition, vol. 2, pp. 1095-1097, 1990 (no month).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Sputtering target and method for manufacturing thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Sputtering target and method for manufacturing thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Sputtering target and method for manufacturing thereof will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1723201

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.