Sputtering target, Al interconnection film, and electronic...

Details Sputtering target, Al interconnection film, and electronic... Sputtering target, Al interconnection film, and electronic...

2005-08-16

2005-08-16

McDonald, Rodney G. (Department: 1753)

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

C257S416000, C257S734000, C257S771000, C428S001100, C204S298120, C420S528000, C420S529000, C420S537000, C420S538000, C420S548000, C420S549000, C420S550000, C420S551000, C420S552000, C420S580000, C420S581000, C420S587000, C420S588000, C148S421000, C148S422000, C148S423000, C148S424000, C148S426000, C148S432000, C148S437000, C148S438000, C148S442000

Reexamination Certificate

active

06929726

ABSTRACT:
A sputtering target consists essentially of 0.1 to 50% by weight of at least one kind of element that forms an intermetallic compound with Al, and the balance of Al. The element that forms an intermetallic compound with Al is uniformly dispersed in the target texture, and in a mapping of EPMA analysis, a portion of which count number of detection sensitivity of the element is 22 or more is less than 60% by area ratio in a measurement area of 20×20 μm. According to such a sputtering target, even when a sputtering method such as long throw sputtering or reflow sputtering is applied, giant dusts or large concavities can be suppressed in occurrence.

REFERENCES:
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patent: WO 97/13855 (1997-04-01), None

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